Philippe Dollfus

Publications

• Conduction gap in double gate bilayer graphene structure
• V. Hung Nguyen, A. Bournel, P. Dollfus, J. Phys.: Condens. Matter 22, 115304, 2010
• Resonant tunneling and negative transconductance in single barrier bilayer graphene structure
• V. Hung Nguyen, A. Bournel, V. Lien Nguyen, P. Dollfus, Appl. Phys. Lett. 95, 232115, 2009
• Negative differential resistance in zigzag-edge graphene nanoribbon junctions
• V. Nam Do, P. Dollfus, J. Appl. Phys. 107, 063705, 2010
• Modelling of metal-graphene coupling and its influence on transport properties in graphene at the charge neutrality point
• V. Nam Do, P. Dollfus, J. Phys.: Condens. Matter 22, 425301, 2010
• Edge shape effect on vibrational modes in graphene nanoribbons: a numerical study
• F. Mazzamuto, J. Saint-Martin, A. Valentin, C. Chassat, P. Dollfus, J. Appl. Phys. 109, 064516, 2011
• Spin-polarized current and tunneling magneto-resistance in ferromagnetic gate bilayer graphene structures
• V. Hung Nguyen, A. Bournel, P. Dollfus, J. Appl. Phys. 109, 073717, 2011
• Large peak-to-valley ratio of negative differential conductance in graphene p-n junctions
• V. Hung Nguyen, A. Bournel, P. Dollfus, J. Appl. Phys. 109, 093706, 2011
• Enhanced thermoelectric properties in graphene nanoribbons by resonant tunneling of electrons
• F. Mazzamuto, V. Hung Nguyen, Y. Apertet, C. Caër, C. Chassat, J. Saint-Martin, P. Dollfus, Phys. Rev. B 83, 235426, 2011
• Giant effect of negative differential conductance in graphene nanoribbon p-n heterojunctions
• V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, A. Bournel, P. Dollfus, Appl. Phys. Lett. 99, 042105, 2011
• Resonant tunneling structures based on epitaxial graphene on SiC
• V. Hung Nguyen, A. Bournel, P. Dollfus, Semicond. Sci. Technol. 26, 125012, 2011
• Graphene nanomesh-based devices exhibiting a strong of negative differential conductance effect
• V. Hung Nguyen, F. Mazzamuto, J. Saint-Martin, A. Bournel, P. Dollfus, Nanotechnology 23, 065201, 2012